IBM delivers performance gain, power savings using high-k/metal gate

Apr 16th, 2008 | By Premnath Sah | Category: Technology

IBM along with many majors like Freescale, Infineon, Samsung, STmicrosystems and Toshiba have demonstrated performance gain and power savings using a new material high-k/metal gate in semi conductor manufacturing. Basically this new material reduces the leakage current considerably and there is performance gain in the range of 35% and power saving of 45% in 32nm fabricaion process.

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